TI launches the first DDR memory-termination linear regulator for space applications
Texas Instruments (TI) introduced the industry's first double-data-rate (DDR) memory linear regulator for space applications. The TPS7H3301-SP is the only DDR regulator immune to single-event effects up to 65 megaelectron volts per centimeter squared (MeV-cm2), powering space-satellite payloads including single-board computers, solid-state recorders and other memory applications. For more information or to download the radiation report, see www.ti.com/TPS7H3301-SP-pr.
Integrating two monolithic power field-effect transistors (FETs) for source and sink termination and an internal voltage reference, the TPS7H3301-SP is up to 50 percent smaller than a switch-mode regulator DDR solution. To see a live demonstration of the new regulator and learn about other products from TI's leading-edge radiation-hardened portfolio, visit Booth 43 during the 2016 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC), starting today.
Key features and benefits:
- Small size: At 0.16 square inches, the device is up to 50 percent smaller than a switch-mode regulator DDR solution, delivering critical weight and launch cost savings.
- Superior radiation performance: Along with industry-leading immunity, the device withstands a total ionizing dose of up to 100 krad. Its stable termination power supply ensures that single-event effects do not impact read-and-write operations.
- Easy design-in: Designers can pair the TPS7H3301-SP with the TPS50601-SP buck converter to create the smallest complete power solution for DDR memory. As with TI's entire space portfolio, designers have access to a full suite of support resources, including comprehensive radiation reports, on-demand training and Simulation Program with Integrated Circuit Emphasis (SPICE) models.
- Maximum export: The device is controlled under U.S. Department of Commerce Export Control Classification Number (ECCN) EAR99.
Find more details here.
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